2inch 4inch 6inch 8inch 3C-N SiC Wafer Silicon Carbide Optoelectronic High-Power RF LEDS
Description of 3C-N SiC Wafer:
Compared to 4H-Sic, although the bandgap of 3C silicon carbide
(3C SiC) 
is lower, its carrier mobility, and thermal conductivity. and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide qate and 3C-sic is lower. which is more conducive to manufacturing high-voltage, highly reliable, and long-life devices. At present, 3C-SiC-based devices are mainly prepared on si substrates with large lattice mismatch and thermal expansion coefficient mismatch between Si and 3C SiC resulting in a high defect density, which affects the performance of devices. Moreover, low-cost 3C-SiC wafers will have a significant substitution impact on the power device market in the 600v-1200vvoltage range, accelerating the entire industry's progress. Therefore, developing bulk 3C-SiC wafers is inevitable.
The character of 3C-N SiC Wafer:
1. Crystal Structure: 3C-SiC has a cubic crystal structure, unlike the more common hexagonal 4H-SiC and 6H-SiC polytypes. This cubic structure offers some advantages in certain applications.
2. Bandgap: The bandgap of 3C-SiC is around 2.2 eV, making it suitable for applications in optoelectronics and high-temperature electronics.
3. Thermal Conductivity: 3C-SiC has high thermal conductivity, which is important for applications requiring efficient heat dissipation.
4. Compatibility: It is compatible with the standard silicon processing technologies, enabling its integration with existing silicon-based devices.
Form of 3C-N SiC Wafer:
| Propery | N-type 3C-SiC, Single Crystal |
| Lattice Parameters | a=4.349 Å |
| Stacking Sequence | ABC |
| Mohs Hardness | ≈9.2 |
| Therm. Expansion Coefficient | 3.8×10-6/K |
| Dielectrc Constant | c~9.66 |
| Band-Gap | 2.36 eV |
| Break-Down Electrical Field | 2-5×106V/cm |
| Saturation Drift Velocity | 2.7×107m/s |
| Grade | Zero MPD Production Grade (Z Grade) | Standard Production Grade (P Grade) | Dummy Grade (D Grade) |
| Diameter | 145.5 mm~150.0 mm |
| Thickness | 350 μm ± 25 μm |
| Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N |
| Micropipe Density | 0 cm-2 |
| Resistivity | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm |
| Primary Flat Orientation | {110} ± 5.0° |
| Primary Flat Length | 32.5 mm ± 2.0 mm |
| Secondary Flat Length | 18.0 mm ± 2.0 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° |
| Edge Exclusion | 3 mm | 6 mm |
| LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm |
| Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.2 nm | Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm |
| Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Areas By High Intensity Light | None | Cumulative area≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
| Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter |
| Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each |
| Silicon Surface Contamination By High Intensity | None |
| Packaging | Multi-wafer Cassette or Single Wafer Container |
Applications of 3C-N SiC Wafer:
1. Power Electronics: 3C-SiC wafers are used in high-power electronic devices such as MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and Schottky diodes due to their high breakdown voltage, high thermal conductivity, and low on-resistance.
2. RF and Microwave Devices: The high electron mobility and superior thermal conductivity of 3C-SiC make it suitable for applications in radio frequency (RF) and microwave devices like high-power amplifiers and high-frequency transistors.
3. Optoelectronics: 3C-SiC wafers are used in the development of optoelectronic devices such as light-emitting diodes (LEDs), photodetectors, and laser diodes due to their wide bandgap and excellent thermal properties.
4. MEMS and NEMS Devices: Micro-electro-mechanical systems (MEMS) and nano-electro-mechanical systems (NEMS) benefit from 3C-SiC wafers for their mechanical stability, high-temperature operation capability, and chemical inertness.
5. Sensors: 3C-SiC wafers are utilized in the production of sensors for harsh environments, such as high-temperature sensors, pressure sensors, gas sensors, and chemical sensors, due to their robustness and stability.
6. Power Grid Systems: In power distribution and transmission systems, 3C-SiC wafers are employed in high-voltage devices and components for efficient power conversion and reduced energy losses.
7. Aerospace and Defense: The high-temperature tolerance and radiation hardness of 3C-SiC make it suitable for aerospace and defense applications, including in aircraft components, radar systems, and communication devices.
8. Energy Storage: 3C-SiC wafers are used in energy storage applications like batteries and supercapacitors due to their high thermal conductivity and stability in harsh operating conditions.
Semiconductor Industry: 3C-SiC wafers are also used in the semiconductor industry for the development of advanced integrated circuits and high-performance electronic components.
Application picture of 3C-N SiC Wafer:
Packing and Shipping:
FAQ:
1.Q:What's the difference between 4H and 3C silicon carbide?
A:Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC
2.Q:What is the electron affinity of 3C SiC?
A:The electron affinities of the 3C, 6H and 4H SIC (0001) are 3.8eV, 3.3eV and 3.1eV, respectively.
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